K9HUGY8J5B-CCK0 vs K9HUGY8J5B-BCK0 Comparación
Comparación detallada lado a lado de K9HUGY8J5B-CCK0 por Samsung Electronics y K9HUGY8J5B-BCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HUGY8J5B-CCK0 - 3D V-NAND TLC Flash | Samsung | SSD Storage
K9HUGY8J5B-CCK0 ✓ ActivoSamsung Electronics
K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9HUGY8J5B-BCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9HUGY8J5B-CCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,60 | $0,00 |
| Tipo de memoria | 3D V-NAND TLC Flash | NAND Flash (3D V-NAND) |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: device density] |
| Organización de memoria | [DATA_NEEDED: organization] | [DATA_NEEDED: page/block organization] |
| Tipo de interfaz | [DATA_NEEDED: interface type] | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycles] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Package Type | [DATA_NEEDED: package type] | — |
| Recuento de pines | [DATA_NEEDED: pin count] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Product Family | — | K9HUG (V-NAND flash) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Interfaz | — | [DATA_NEEDED: asynchronous/toggle DDR] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |
| Encapsulado | — | [DATA_NEEDED: package code, e.g. FBGA] |