K9LCG08U1M vs K9HQGY8S5M Comparación
Comparación detallada lado a lado de K9LCG08U1M por Samsung Electronics y K9HQGY8S5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActivoComparación de especificaciones
| Parámetro | K9LCG08U1M | K9HQGY8S5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Flash | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $11,85 | $0,00 |
| Tipo de memoria | NAND Flash, MLC | — |
| Density | 64 Gbit (8 GB) | [DATA_NEEDED: total bit density] |
| Organización de memoria | x8 I/O | — |
| Interfaz | Asynchronous multiplexed NAND I/O | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Cell Type | MLC (2 bits per cell) | — |
| Encapsulado | BGA | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Manufacturer | — | Samsung Electronics |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |