K9LCG08U1M vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9LCG08U1M by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9LCG08U1M | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.85 | $0.00 |
| Memory Type | NAND Flash, MLC | — |
| Density | 64 Gbit (8 GB) | [DATA_NEEDED: total bit density] |
| Organization | x8 I/O | — |
| Interface | Asynchronous multiplexed NAND I/O | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Cell Type | MLC (2 bits per cell) | — |
| Package | BGA | — |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Supply Voltage | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Manufacturer | — | Samsung Electronics |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |