K9MDG08U5M vs K9DVGB8U5M Comparación

Comparación detallada lado a lado de K9MDG08U5M por Samsung Electronics y K9DVGB8U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Activo
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Activo

Comparación de especificaciones

Parámetro K9MDG08U5M K9DVGB8U5M
Marca Samsung Electronics Samsung Electronics
Categoría Memory ICs Memory ICs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $35,50 $3,05
Tipo de memoria MLC Large Block NAND Flash NAND Flash
Density 16 Gbit (2 GB) —
Organización de memoria 16G x 8 bit [DATA_NEEDED: capacity organization]
Cell Type MLC (2 bits per cell) —
Supply Voltage Min 2.7 V —
Supply Voltage Max 3.6 V —
Interfaz Asynchronous x8 multiplexed address/data Asynchronous x8-bit I/O
Encapsulado 48-pin TSOP1 dual stacked, 12 mm x 20 mm [DATA_NEEDED: package type and dimensions]
Terminals 48 —
Circuits 1 —
Die Configuration Dual stacked —
Tipo de montaje Surface Mount Surface Mount
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time (tR) [DATA_NEEDED: tR] —
Program Time (tPROG) [DATA_NEEDED: tPROG] [DATA_NEEDED: page program time]
Estado RoHS unknown [DATA_NEEDED: RoHS compliance]
Tensión de alimentación — [DATA_NEEDED: VCC range]
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

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