K9MDG08U5M vs K9DVGB8U5M Comparaison

Comparaison détaillée côte à côte de K9MDG08U5M par Samsung Electronics et K9DVGB8U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Actif
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Actif

Comparaison des spécifications

Paramètre K9MDG08U5M K9DVGB8U5M
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs Memory ICs
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $35,50 $3,05
Type de mémoire MLC Large Block NAND Flash NAND Flash
Density 16 Gbit (2 GB) —
Organisation de la mémoire 16G x 8 bit [DATA_NEEDED: capacity organization]
Cell Type MLC (2 bits per cell) —
Supply Voltage Min 2.7 V —
Supply Voltage Max 3.6 V —
Interface Asynchronous x8 multiplexed address/data Asynchronous x8-bit I/O
Boîtier 48-pin TSOP1 dual stacked, 12 mm x 20 mm [DATA_NEEDED: package type and dimensions]
Terminals 48 —
Circuits 1 —
Die Configuration Dual stacked —
Type de montage Surface Mount Surface Mount
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time (tR) [DATA_NEEDED: tR] —
Program Time (tPROG) [DATA_NEEDED: tPROG] [DATA_NEEDED: page program time]
Statut RoHS unknown [DATA_NEEDED: RoHS compliance]
Tension d'alimentation — [DATA_NEEDED: VCC range]
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

Fiches techniques et ressources

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