K9PKGY8S7M-CCK0 vs K9DUGY8S0M-CCK0 Comparación
Comparación detallada lado a lado de K9PKGY8S7M-CCK0 por Samsung Electronics y K9DUGY8S0M-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
K9DUGY8S0M-CCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9PKGY8S7M-CCK0 | K9DUGY8S0M-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,40 | $0,00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| Tipo de memoria | NAND Flash | NAND Flash (raw, controller-managed) |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Encapsulado | BGA | [DATA_NEEDED: package code and pin count] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | [DATA_NEEDED: interface type/width] |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | Lead free / RoHS compliant | unknown |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Family | — | K9 series NAND Flash (V-NAND) |
| Cell Technology | — | V-NAND (vertical charge-trap) |
| Density | — | [DATA_NEEDED: density] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Read Time | — | [DATA_NEEDED: tR] |
| P/E Cycle Endurance | — | [DATA_NEEDED: endurance] |