K9PKGY8S7M-CCK0 vs K9DUGY8S0M-CCK0 Comparaison
Comparaison détaillée côte à côte de K9PKGY8S7M-CCK0 par Samsung Electronics et K9DUGY8S0M-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K9PKGY8S7M-CCK0 | K9DUGY8S0M-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,40 | $0,00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| Type de mémoire | NAND Flash | NAND Flash (raw, controller-managed) |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Boîtier | BGA | [DATA_NEEDED: package code and pin count] |
| Type de montage | Surface Mount | Surface Mount |
| Interface | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | [DATA_NEEDED: interface type/width] |
| Tension d'alimentation | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | Lead free / RoHS compliant | unknown |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Family | — | K9 series NAND Flash (V-NAND) |
| Cell Technology | — | V-NAND (vertical charge-trap) |
| Density | — | [DATA_NEEDED: density] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Read Time | — | [DATA_NEEDED: tR] |
| P/E Cycle Endurance | — | [DATA_NEEDED: endurance] |