K9PKGY8S7M-CCK0 vs K9DUGY8S0M-CCK0 Comparação

Comparação detalhada lado a lado de K9PKGY8S7M-CCK0 por Samsung Electronics e K9DUGY8S0M-CCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9PKGY8S7M-CCK0 K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 ✓ Ativo
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ Ativo

Comparação de especificações

Parâmetro K9PKGY8S7M-CCK0 K9DUGY8S0M-CCK0
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $9,40 $0,00
Memory Capacity 128 Gb (16 GB) —
Tipo de memória NAND Flash NAND Flash (raw, controller-managed)
Cell Architecture 3D V-NAND, MLC (2 bits/cell) —
V-NAND Layers 24 layers —
Manufacturer Samsung Electronics Samsung Electronics
Encapsulamento BGA [DATA_NEEDED: package code and pin count]
Tipo de montagem Surface Mount Surface Mount
Interface Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) [DATA_NEEDED: interface type/width]
Tensão de alimentação [DATA_NEEDED: supply voltage] [DATA_NEEDED: VCC range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS Lead free / RoHS compliant unknown
Application Domain Enterprise SSD (e.g., Samsung 845DC Pro) —
Access Time (tR) [DATA_NEEDED: read cycle time] —
Data Retention [DATA_NEEDED: retention specification] —
Product Family — K9 series NAND Flash (V-NAND)
Cell Technology — V-NAND (vertical charge-trap)
Density — [DATA_NEEDED: density]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

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