M29F800FB55M3F2 vs M29F400FT55N3F2 Comparación
Comparación detallada lado a lado de M29F800FB55M3F2 por Micron Technology y M29F400FT55N3F2 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ ActivoComparación de especificaciones
| Parámetro | M29F800FB55M3F2 | M29F400FT55N3F2 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,72 | $1,51 |
| Tipo de memoria | NOR Flash, Parallel | NOR Flash (SLC) |
| Density | 8389 kbits (8 Mbit) | — |
| Organización de memoria | 512K x 16-bit / 1M x 8-bit | 256K x 16 |
| Number of Words | 512 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Type | Bottom Boot Block | — |
| Interfaz | Parallel, Asynchronous | Parallel |
| Programming | Embedded byte/word program algorithms | — |
| OTP Area | 64 byte | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Automotive Qualification | Auto Grade 3 (temperature grade 3, +125C) | — |
| Encapsulado | 44-pin SO (SOIC-44) | 44-SO (SOP-44) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packing | Tape & Reel (T/R) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Tamaño de memoria | — | 4 Mbit |
| Tensión de alimentación | — | 5 V |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |