M29W128GL70N3F vs M29W128GL70ZS3F Comparación
Comparación detallada lado a lado de M29W128GL70N3F por Micron Technology y M29W128GL70ZS3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W128GL70N3F | M29W128GL70ZS3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,48 | $5,90 |
| Tipo de memoria | NOR Flash | NOR Flash (Parallel) |
| Memory Format | FLASH - NOR | — |
| Density | 128 Mbit | 128 Mbit |
| Organización de memoria | 8M x16 / 16M x8 | 16M x 8 / 8M x 16 |
| Interfaz | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | [DATA_NEEDED: supply voltage range] | 3 V / 3.3 V |
| Encapsulado | 56-TSOP | 64-FBGA (11 x 13 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Block Organization Variant | GL (boot-block) | — |
| Speed Grade Code | -70 | — |
| Package Finish Code | N3F (lead-free TSOP) | — |
| Programming Interface | Command-set parallel bus, embedded state machine | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Block Architecture | — | 64/64 (two 64 Mbit partitions) |
| Qualification | — | Automotive, AEC-Q100 |
| Packaging | — | Tape & Reel (TR) |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Supply Voltage Range | — | [DATA_NEEDED: VCC min/max] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standby Current | — | [DATA_NEEDED: standby current] |