MPVZ5004G6U vs MPVZ5004GW7U Comparación
Comparación detallada lado a lado de MPVZ5004G6U por STMicroelectronics y MPVZ5004GW7U por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPVZ5004G6U - 3.92kPa Vented Gauge Pressure Sensor 8-SMD | ST
MPVZ5004G6U ✓ Activo
Comparación de especificaciones
| Parámetro | MPVZ5004G6U | MPVZ5004GW7U |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,60 | $6,75 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 3.92 kPa (0 to 0.57 PSI) | 0 kPa to 3.92 kPa (0 to 0.57 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tipo de salida | Analog Voltage | Analog voltage, ratiometric |
| Output Voltage Span | 1 V to 4.9 V (at 5 V supply) | 1.0 V to 4.9 V (at 5 V excitation) |
| Accuracy | [DATA_NEEDED: accuracy] | [DATA_NEEDED: linearity/error %] |
| Tensión de alimentación | 5 V typical | 5.0 V (typ) |
| Corriente de alimentación | [DATA_NEEDED: supply current] | 4 mA typ (per datasheet family) |
| Temperatura de funcionamiento | 0 to 85 degrees Celsius | 0 °C to 85 °C |
| Response Time | 1 ms typical | — |
| Encapsulado | 8-SMD Module | 8-DIP Module (Case 1560-02) |
| Tipo de montaje | Surface Mount | Through-Hole (DIP module with tube port) |
| Pressure Port | Single axial vent port (gauge reference) | Male 0.22" (5.59 mm) tube, single axial |
| Sensor Technology | Piezoresistive MEMS | — |
| Estado RoHS | Compliant | [DATA_NEEDED: confirm from datasheet] |
| Output Ratiometric | Yes (scales with VDD) | — |
| Output Voltage at 0 kPa | — | 1.0 V typ |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Signal Conditioning | — | On-chip amplifier, temperature-compensated, calibrated |
| Sensitivity | — | approx. 1.0 V / kPa |
| Media Compatibility | — | Non-corrosive dry gases (air) |