MPVZ5004G6U vs MPVZ5004GW7U Comparaison
Comparaison détaillée côte à côte de MPVZ5004G6U par STMicroelectronics et MPVZ5004GW7U par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPVZ5004G6U - 3.92kPa Vented Gauge Pressure Sensor 8-SMD | ST
MPVZ5004G6U ✓ Actif
Comparaison des spécifications
| Paramètre | MPVZ5004G6U | MPVZ5004GW7U |
|---|---|---|
| Marque | STMicroelectronics | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,60 | $6,75 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 3.92 kPa (0 to 0.57 PSI) | 0 kPa to 3.92 kPa (0 to 0.57 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Type de sortie | Analog Voltage | Analog voltage, ratiometric |
| Output Voltage Span | 1 V to 4.9 V (at 5 V supply) | 1.0 V to 4.9 V (at 5 V excitation) |
| Accuracy | [DATA_NEEDED: accuracy] | [DATA_NEEDED: linearity/error %] |
| Tension d'alimentation | 5 V typical | 5.0 V (typ) |
| Courant d'alimentation | [DATA_NEEDED: supply current] | 4 mA typ (per datasheet family) |
| Température de fonctionnement | 0 to 85 degrees Celsius | 0 °C to 85 °C |
| Response Time | 1 ms typical | — |
| Boîtier | 8-SMD Module | 8-DIP Module (Case 1560-02) |
| Type de montage | Surface Mount | Through-Hole (DIP module with tube port) |
| Pressure Port | Single axial vent port (gauge reference) | Male 0.22" (5.59 mm) tube, single axial |
| Sensor Technology | Piezoresistive MEMS | — |
| Statut RoHS | Compliant | [DATA_NEEDED: confirm from datasheet] |
| Output Ratiometric | Yes (scales with VDD) | — |
| Output Voltage at 0 kPa | — | 1.0 V typ |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Signal Conditioning | — | On-chip amplifier, temperature-compensated, calibrated |
| Sensitivity | — | approx. 1.0 V / kPa |
| Media Compatibility | — | Non-corrosive dry gases (air) |