MPX2010D vs MPXM2010GS Comparación
Comparación detallada lado a lado de MPX2010D por STMicroelectronics y MPXM2010GS por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActivoNXP Semiconductors
MPXM2010GS - 10kPa Vented Gauge Pressure Sensor | NXP/STMicro
MPXM2010GS ✓ ActivoComparación de especificaciones
| Parámetro | MPX2010D | MPXM2010GS |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,10 | $5,62 |
| Pressure Type | Differential (Port 1 vs Port 2) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Tipo de salida | Analog Wheatstone Bridge (mV) | Wheatstone Bridge (analog, differential mV) |
| Output Voltage Span | 0 mV to 25 mV at 10V excitation | 0 mV to 25 mV at 10 V excitation |
| Sensitivity | 2.5 mV/kPa (nominal, at 10V excitation) | 2.5 mV/kPa (nominal at 10 V) |
| Excitation Voltage | 10 V (typical), 16 V (maximum) | 10 V (max 16 V per NXP datasheet) |
| Linearity | 0.1% of full-scale (typical) | [DATA_NEEDED: linearity %] |
| Rango de temperatura de funcionamiento | 0 C to +85 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Encapsulado / Carcasa | 4-SIP Module (Case 344-15) | — |
| Tipo de montaje | Through-Hole | Surface Mount |
| Número de pines | 4 | — |
| On-Chip Temperature Compensation | Yes (laser trimmed) | — |
| Bridge Configuration | 4-arm piezoresistive Wheatstone | — |
| Estado RoHS | [DATA_NEEDED: RoHS status from ST datasheet] | [DATA_NEEDED: RoHS status] |
| Sensor Family | MPX2010 / MPXV2010G / MPXM2010 | — |
| Diaphragm Type | Single monolithic silicon | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload pressure] |
| Corriente de alimentación | — | 6 mA (typical at 10 V excitation) |
| Temperatura de funcionamiento | — | -40 °C to +125 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Temperature Compensation | — | On-chip (laser-trimmed thin-film) |
| Port Configuration | — | Top port, male 0.12" (2.97 mm) tube |
| Encapsulado | — | 5-SMD Module, top port |
| Packing | — | Reel-Reel 13" Q2 NDP |
| Min Package Quantity | — | 400 |
| Min Order Quantity | — | 400 |