MPX2100GP vs MPX2050GP Comparación
Comparación detallada lado a lado de MPX2100GP por NXP Semiconductors y MPX2050GP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActivoComparación de especificaciones
| Parámetro | MPX2100GP | MPX2050GP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,40 | $9,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 14.5 psi (0 to 100 kPa) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overpressure | 58.02 psi (400 kPa) | — |
| Tipo de salida | Wheatstone Bridge (analog voltage, ratiometric) | Analog Wheatstone Bridge (mV) |
| Full-Scale Span | 40 mV typical at 10 V supply | — |
| Offset | 0 mV minimum at 0 kPa | — |
| Tensión de alimentación | 10 V typical (ratiometric) | — |
| Maximum Operating Current | 6 mA | — |
| Port Size | Male 0.19 in (4.93 mm) barbed tube | — |
| Port Style | Barbed | Male 0.19" (4.93 mm) Tube |
| Encapsulado | 4-SIP Module (Unibody through-hole) | — |
| Tipo de montaje | Through-Hole | Through-Hole (SIP, vertical) |
| Temperature Compensation | On-chip, calibrated | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Technology | Silicon piezoresistive, MEMS | Silicon Piezoresistive, MEMS |
| Termination Style | PCB (SIP pins) | — |
| Estado RoHS | unknown | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Linearity | — | +/-0.05% to +/-0.1% of FSS (typ) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Response Time | — | [DATA_NEEDED: response time / bandwidth] |
| Encapsulado / Carcasa | — | 4-SIP Module (Case 344B-01) |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |