MPXC2012DT1 vs MPX2010DP Comparación
Comparación detallada lado a lado de MPXC2012DT1 por NXP Semiconductors y MPX2010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPXC2012DT1 | MPX2010DP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,40 | $8,50 |
| Pressure Type | Differential | — |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Over Pressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Tipo de salida | Wheatstone Bridge (analog mV) | Analog voltage, Wheatstone bridge (mV level) |
| Full-Scale Output | 24 mV to 26 mV (typ. 25 mV) at 10 V excitation | — |
| Offset (Null) | 0 mV nominal at 10 V excitation | — |
| Excitation Voltage | 10 V DC typical | — |
| Bridge Resistance | [DATA_NEEDED: input/output bridge resistance] | — |
| Linearity | [DATA_NEEDED: linearity %FS] | ±0.05% (typ) |
| Pressure Port Size | Female, 0.128 in (3.25 mm) side port | — |
| Port Style | Side port, single barbed inlet | — |
| Encapsulado / Carcasa | 4-SSIP Module (chip-pak, no gel) | — |
| Termination Style | Through-hole PCB (vertical mount) | — |
| Gel Protection | No (bare die in chip-pak cavity) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40 °C to +125 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Tipo de montaje | Through-hole, vertical | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Nivel MSL | Not applicable (through-hole sensor module) | — |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | — |
| Tipo de sensor | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Technology | — | Piezoresistive (silicon strain gauge bridge) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Tensión de alimentación | — | 10 V DC typical (max 16 V) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Response Time | — | 1.0 ms (typical) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |