MPXC2012DT1 vs MPX2010DP Comparaison
Comparaison détaillée côte à côte de MPXC2012DT1 par NXP Semiconductors et MPX2010DP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MPXC2012DT1 | MPX2010DP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | NRND | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $7,40 | $8,50 |
| Pressure Type | Differential | — |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Over Pressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Type de sortie | Wheatstone Bridge (analog mV) | Analog voltage, Wheatstone bridge (mV level) |
| Full-Scale Output | 24 mV to 26 mV (typ. 25 mV) at 10 V excitation | — |
| Offset (Null) | 0 mV nominal at 10 V excitation | — |
| Excitation Voltage | 10 V DC typical | — |
| Bridge Resistance | [DATA_NEEDED: input/output bridge resistance] | — |
| Linearity | [DATA_NEEDED: linearity %FS] | ±0.05% (typ) |
| Pressure Port Size | Female, 0.128 in (3.25 mm) side port | — |
| Port Style | Side port, single barbed inlet | — |
| Boîtier / Format | 4-SSIP Module (chip-pak, no gel) | — |
| Termination Style | Through-hole PCB (vertical mount) | — |
| Gel Protection | No (bare die in chip-pak cavity) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -40 °C to +125 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Type de montage | Through-hole, vertical | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Niveau MSL | Not applicable (through-hole sensor module) | — |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | — |
| Type de capteur | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Technology | — | Piezoresistive (silicon strain gauge bridge) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Tension d'alimentation | — | 10 V DC typical (max 16 V) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Response Time | — | 1.0 ms (typical) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |