MPXM2202AS vs MPXM2202GST1 Comparación
Comparación detallada lado a lado de MPXM2202AS por NXP Semiconductors y MPXM2202GST1 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPXM2202AS - 200 kPa Absolute Pressure Sensor, M-PAC | NXP
MPXM2202AS ⚠ Última compraSTMicroelectronics
MPXM2202GST1 - 200kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXM2202GST1 ✓ ActivoComparación de especificaciones
| Parámetro | MPXM2202AS | MPXM2202GST1 |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Última compra | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,86 | $8,10 |
| Pressure Type | Absolute | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 200 kPa (0 psi to 29.01 psi) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Tipo de salida | Analog Wheatstone bridge (differential mV) | Analog Wheatstone bridge (millivolt differential) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity | 0.2 mV/kPa (typical) | — |
| Supply Voltage (Excitation) | 10 V typical (max per datasheet) | — |
| Corriente de alimentación | [DATA_NEEDED: typical excitation current] | — |
| Rango de temperatura de funcionamiento | 0C to +85C (compensated) | — |
| Temperature Compensation | On-chip (0C to +85C) | On-chip, 0 °C to +85 °C |
| Encapsulado | M-PAC-5 (5-SMD module with top port) | 5-SMD M-PAK module, top port |
| Pressure Port | Top port, 0.12 in (2.97 mm) tube | — |
| Tipo de montaje | Surface Mount | Surface Mount (SMD Gull-Wing leads) |
| Media Compatibility | Dry, non-corrosive gases only | — |
| Estado RoHS | [DATA_NEEDED: RoHS status from datasheet] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Full-Scale Span | — | 0 mV to 40 mV at 10 V excitation |
| Linearity | — | ±0.25% (P2 grade) |
| Tensión de alimentación | — | 10 V typical (sensor excitation) |
| Temperatura de funcionamiento | — | 0 °C to +85 °C (compensated range) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Type | — | Male barbed tube, top-side, 0.12" (2.97 mm) |
| Technology | — | Piezoresistive silicon MEMS, single-element |
| Bridge Resistance | — | [DATA_NEEDED: input/output bridge resistance] |