MPXM2202AS vs MPXM2202GST1 Vergleich
Detaillierter Direktvergleich von MPXM2202AS von NXP Semiconductors und MPXM2202GST1 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXM2202AS - 200 kPa Absolute Pressure Sensor, M-PAC | NXP
MPXM2202AS ⚠ Letzte BestellmöglichkeitSTMicroelectronics
MPXM2202GST1 - 200kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXM2202GST1 ✓ AktivSpezifikationsvergleich
| Parameter | MPXM2202AS | MPXM2202GST1 |
|---|---|---|
| Marke | NXP Semiconductors | STMicroelectronics |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,86 | $8,10 |
| Pressure Type | Absolute | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 200 kPa (0 psi to 29.01 psi) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Ausgangstyp | Analog Wheatstone bridge (differential mV) | Analog Wheatstone bridge (millivolt differential) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity | 0.2 mV/kPa (typical) | — |
| Supply Voltage (Excitation) | 10 V typical (max per datasheet) | — |
| Versorgungsstrom | [DATA_NEEDED: typical excitation current] | — |
| Betriebstemperaturbereich | 0C to +85C (compensated) | — |
| Temperature Compensation | On-chip (0C to +85C) | On-chip, 0 °C to +85 °C |
| Gehäuse | M-PAC-5 (5-SMD module with top port) | 5-SMD M-PAK module, top port |
| Pressure Port | Top port, 0.12 in (2.97 mm) tube | — |
| Montageart | Surface Mount | Surface Mount (SMD Gull-Wing leads) |
| Media Compatibility | Dry, non-corrosive gases only | — |
| RoHS-Status | [DATA_NEEDED: RoHS status from datasheet] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Full-Scale Span | — | 0 mV to 40 mV at 10 V excitation |
| Linearity | — | ±0.25% (P2 grade) |
| Versorgungsspannung | — | 10 V typical (sensor excitation) |
| Betriebstemperatur | — | 0 °C to +85 °C (compensated range) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Type | — | Male barbed tube, top-side, 0.12" (2.97 mm) |
| Technology | — | Piezoresistive silicon MEMS, single-element |
| Bridge Resistance | — | [DATA_NEEDED: input/output bridge resistance] |