MPXM2202AS vs MPXM2202GST1 Comparaison
Comparaison détaillée côte à côte de MPXM2202AS par NXP Semiconductors et MPXM2202GST1 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPXM2202AS - 200 kPa Absolute Pressure Sensor, M-PAC | NXP
MPXM2202AS ⚠ Dernier achatSTMicroelectronics
MPXM2202GST1 - 200kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXM2202GST1 ✓ ActifComparaison des spécifications
| Paramètre | MPXM2202AS | MPXM2202GST1 |
|---|---|---|
| Marque | NXP Semiconductors | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,86 | $8,10 |
| Pressure Type | Absolute | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 200 kPa (0 psi to 29.01 psi) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Type de sortie | Analog Wheatstone bridge (differential mV) | Analog Wheatstone bridge (millivolt differential) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity | 0.2 mV/kPa (typical) | — |
| Supply Voltage (Excitation) | 10 V typical (max per datasheet) | — |
| Courant d'alimentation | [DATA_NEEDED: typical excitation current] | — |
| Plage de température de fonctionnement | 0C to +85C (compensated) | — |
| Temperature Compensation | On-chip (0C to +85C) | On-chip, 0 °C to +85 °C |
| Boîtier | M-PAC-5 (5-SMD module with top port) | 5-SMD M-PAK module, top port |
| Pressure Port | Top port, 0.12 in (2.97 mm) tube | — |
| Type de montage | Surface Mount | Surface Mount (SMD Gull-Wing leads) |
| Media Compatibility | Dry, non-corrosive gases only | — |
| Statut RoHS | [DATA_NEEDED: RoHS status from datasheet] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Full-Scale Span | — | 0 mV to 40 mV at 10 V excitation |
| Linearity | — | ±0.25% (P2 grade) |
| Tension d'alimentation | — | 10 V typical (sensor excitation) |
| Température de fonctionnement | — | 0 °C to +85 °C (compensated range) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Type | — | Male barbed tube, top-side, 0.12" (2.97 mm) |
| Technology | — | Piezoresistive silicon MEMS, single-element |
| Bridge Resistance | — | [DATA_NEEDED: input/output bridge resistance] |