MRF5S19060MR1 vs MRF5S19060MBR1 Comparación
Comparación detallada lado a lado de MRF5S19060MR1 por NXP Semiconductors y MRF5S19060MBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ ActivoNXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteComparación de especificaciones
| Parámetro | MRF5S19060MR1 | MRF5S19060MBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | RF Amplifiers |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $25,60 | $16,40 |
| Manufacturer | NXP (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S19060MR1 | — |
| Tipo de transistor | N-Channel LDMOS RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| Encapsulado | TO-270 WB-4 (Ceramic) | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) |
| Tipo de montaje | Surface Mount / Flange Mount | — |
| Test Signal | 2 x N-CDMA | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Operating Class | Class AB | — |
| Technology | — | RF Power Field Effect Transistor |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Typical Operating Frequency | — | 1990 MHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Nominal Drain Operating Voltage | — | 28 V |
| Output Power (Average) | — | 12 W |
| Power Gain | — | 14 dB |
| Test Current (Drain) | — | 750 mA |
| Drain Current Rating (Leakage Spec) | — | 10 uA |
| VSWR Tolerance | — | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg |
| Input Matching | — | Internally matched |
| ESD Protection | — | Integrated |
| Package Outline | — | Case 1486-03, Style 1 |
| Estilo de montaje | — | Flange / surface mount with thermal pad |
| Maximum Junction Temperature | — | 200 degree C |
| Packaging | — | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) |
| Target Application | — | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage |