MRF5S19060MR1 vs MRF5S19060MBR1 Comparaison
Comparaison détaillée côte à côte de MRF5S19060MR1 par NXP Semiconductors et MRF5S19060MBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ ActifNXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteComparaison des spécifications
| Paramètre | MRF5S19060MR1 | MRF5S19060MBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | RF Amplifiers |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,60 | $16,40 |
| Manufacturer | NXP (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S19060MR1 | — |
| Type de transistor | N-Channel LDMOS RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| Boîtier | TO-270 WB-4 (Ceramic) | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) |
| Type de montage | Surface Mount / Flange Mount | — |
| Test Signal | 2 x N-CDMA | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Operating Class | Class AB | — |
| Technology | — | RF Power Field Effect Transistor |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Typical Operating Frequency | — | 1990 MHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Nominal Drain Operating Voltage | — | 28 V |
| Output Power (Average) | — | 12 W |
| Power Gain | — | 14 dB |
| Test Current (Drain) | — | 750 mA |
| Drain Current Rating (Leakage Spec) | — | 10 uA |
| VSWR Tolerance | — | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg |
| Input Matching | — | Internally matched |
| ESD Protection | — | Integrated |
| Package Outline | — | Case 1486-03, Style 1 |
| Style de montage | — | Flange / surface mount with thermal pad |
| Maximum Junction Temperature | — | 200 degree C |
| Packaging | — | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) |
| Target Application | — | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage |