MRF5S21045NBR1 vs MRF5S19060NBR1 Comparación
Comparación detallada lado a lado de MRF5S21045NBR1 por NXP Semiconductors y MRF5S19060NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF5S21045NBR1 | MRF5S19060NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $25,20 | $25,40 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Band | 2110 MHz to 2170 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 2.12 GHz | — |
| Output Power (Avg) | 10 W | — |
| Power Gain | 14.5 dB (typical at 2.12 GHz, 28 V) | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Current | 500 mA | — |
| Encapsulado | TO-272 WB-4 (over-molded plastic) | TO-272 WB-4 (overmolded plastic) |
| Supplier Device Package | TO-272 WB-4 | — |
| Tipo de montaje | Surface Mount | Surface Mount (SMD) |
| Operating Mode | Class AB | — |
| Application | W-CDMA base station, TDMA/CDMA, multicarrier amplifier | — |
| Technology | Laterally Diffused MOS (LDMOS) | Silicon LDMOS |
| Compliance | RoHS (status per distributor listing - confirm at order) | — |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| Recuento de pines | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Estado RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Nivel MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |