MRF5S21045NBR1 vs MRF5S19060NBR1 对比
详细并排对比 MRF5S21045NBR1 出自 NXP Semiconductors 和 MRF5S19060NBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF5S21045NBR1 | MRF5S19060NBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.20 | $25.40 |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Band | 2110 MHz to 2170 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 2.12 GHz | — |
| Output Power (Avg) | 10 W | — |
| Power Gain | 14.5 dB (typical at 2.12 GHz, 28 V) | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Current | 500 mA | — |
| 封装 | TO-272 WB-4 (over-molded plastic) | TO-272 WB-4 (overmolded plastic) |
| Supplier Device Package | TO-272 WB-4 | — |
| 安装类型 | Surface Mount | Surface Mount (SMD) |
| Operating Mode | Class AB | — |
| Application | W-CDMA base station, TDMA/CDMA, multicarrier amplifier | — |
| Technology | Laterally Diffused MOS (LDMOS) | Silicon LDMOS |
| Compliance | RoHS (status per distributor listing - confirm at order) | — |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| 引脚数量 | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| RoHS 状态 | — | [DATA_NEEDED: RoHS compliance status] |
| MSL 等级 | — | [DATA_NEEDED: MSL moisture sensitivity level] |