MRF5S21045NBR1 vs MRF5S19060NBR1 Comparaison
Comparaison détaillée côte à côte de MRF5S21045NBR1 par NXP Semiconductors et MRF5S19060NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF5S21045NBR1 | MRF5S19060NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,20 | $25,40 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Band | 2110 MHz to 2170 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 2.12 GHz | — |
| Output Power (Avg) | 10 W | — |
| Power Gain | 14.5 dB (typical at 2.12 GHz, 28 V) | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Current | 500 mA | — |
| Boîtier | TO-272 WB-4 (over-molded plastic) | TO-272 WB-4 (overmolded plastic) |
| Supplier Device Package | TO-272 WB-4 | — |
| Type de montage | Surface Mount | Surface Mount (SMD) |
| Operating Mode | Class AB | — |
| Application | W-CDMA base station, TDMA/CDMA, multicarrier amplifier | — |
| Technology | Laterally Diffused MOS (LDMOS) | Silicon LDMOS |
| Compliance | RoHS (status per distributor listing - confirm at order) | — |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| Nombre de broches | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Niveau MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |