MRF6S19200HR5 vs MRFE6S9200HR3 Comparación
Comparación detallada lado a lado de MRF6S19200HR5 por NXP Semiconductors y MRFE6S9200HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF6S19200HR5 | MRFE6S9200HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $89,75 | $52,30 |
| Tipo de transistor | LDMOS | N-Channel LDMOS (RF Power) |
| Technology | RF Power MOSFET | Enhancement-mode LDMOS (HV6E) |
| Drain-Source Voltage (Vds) Max | 66 V | — |
| Test Voltage (Vds) | 28 V | — |
| Test Current (Ids) | 1.6 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Power Gain (Typ) | 17.9 dB | — |
| Output Power (Pout) | 56 W (CW) | — |
| Encapsulado | NI-780H-2L (ceramic flange) | NI-880H-2L ceramic air-cavity |
| Tipo de montaje | Flange / Screw Mount | Chassis / flange mount, SMD variant 5.08 mm height |
| Operating Mode | Class AB, Class C | Class AB, Class C, Doherty |
| Application | CDMA base station, multicarrier amplifiers | — |
| Input Matching | Internal (broadband) | — |
| Lead Free Status | Yes | Lead Free (per datasheet) |
| Estado RoHS | Compliant | Compliant |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Target Application | — | W-CDMA base-station final stage |