MRF6S27050HR5 vs MRF6S21060NBR1 Comparación
Comparación detallada lado a lado de MRF6S27050HR5 por NXP Semiconductors y MRF6S21060NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 Obsolete
Comparación de especificaciones
| Parámetro | MRF6S27050HR5 | MRF6S21060NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $17,50 | $21,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Tipo de transistor | LDMOS, N-Channel, RF Power | LDMOS, N-Channel Enhancement-Mode |
| Part Status | Obsolete | — |
| Frequency | 2.62 GHz (operating band) | — |
| Test Voltage (Vds) | 28 V | — |
| Current Rating | [DATA_NEEDED: continuous/maximum drain current] | — |
| Test Current | 500 mA | — |
| Power Gain (Gps) | 16 dB (typical at 2.62 GHz) | — |
| Power Output | 7 W | — |
| Voltage - Rated (Vds max) | 68 V | — |
| Encapsulado / Carcasa | NI-780H-2L | — |
| Supplier Device Package | NI-780 | — |
| Tipo de montaje | Chassis Mount / Screw Flange | Surface Mount / Flange Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Nivel MSL | Not applicable (non-surface-mount ceramic package) | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | compliant |
| Primary Application | WCDMA / UMTS base-station PA driver and final stage | — |
| Technology | — | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.12 GHz |
| Test Drain Voltage (VDD) | — | 28 V |
| Test Quiescent Current (IDQ) | — | 1600 mA |
| Power Gain | — | 15.5 dB |
| Output Power (Avg, Single-Carrier W-CDMA) | — | 14 W |
| Power Added Efficiency | — | [DATA_NEEDED: PAE %] |
| Operating Mode | — | Class AB |
| Encapsulado | — | TO-272 WB-4 (ceramic flanged) |
| Lead Free | — | yes |
| Target Application | — | W-CDMA base station final stage |