MRF6S27050HR5 vs MRF6S21060NBR1 Comparaison
Comparaison détaillée côte à côte de MRF6S27050HR5 par NXP Semiconductors et MRF6S21060NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 Obsolete
Comparaison des spécifications
| Paramètre | MRF6S27050HR5 | MRF6S21060NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $17,50 | $21,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Type de transistor | LDMOS, N-Channel, RF Power | LDMOS, N-Channel Enhancement-Mode |
| Part Status | Obsolete | — |
| Frequency | 2.62 GHz (operating band) | — |
| Test Voltage (Vds) | 28 V | — |
| Current Rating | [DATA_NEEDED: continuous/maximum drain current] | — |
| Test Current | 500 mA | — |
| Power Gain (Gps) | 16 dB (typical at 2.62 GHz) | — |
| Power Output | 7 W | — |
| Voltage - Rated (Vds max) | 68 V | — |
| Boîtier / Format | NI-780H-2L | — |
| Supplier Device Package | NI-780 | — |
| Type de montage | Chassis Mount / Screw Flange | Surface Mount / Flange Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Niveau MSL | Not applicable (non-surface-mount ceramic package) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | compliant |
| Primary Application | WCDMA / UMTS base-station PA driver and final stage | — |
| Technology | — | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.12 GHz |
| Test Drain Voltage (VDD) | — | 28 V |
| Test Quiescent Current (IDQ) | — | 1600 mA |
| Power Gain | — | 15.5 dB |
| Output Power (Avg, Single-Carrier W-CDMA) | — | 14 W |
| Power Added Efficiency | — | [DATA_NEEDED: PAE %] |
| Operating Mode | — | Class AB |
| Boîtier | — | TO-272 WB-4 (ceramic flanged) |
| Lead Free | — | yes |
| Target Application | — | W-CDMA base station final stage |