MRF6S27050HR5 vs MRF6S23140HR3 Comparación

Comparación detallada lado a lado de MRF6S27050HR5 por NXP Semiconductors y MRF6S23140HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6S27050HR5 MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 Obsolete
NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ Activo

Comparación de especificaciones

Parámetro MRF6S27050HR5 MRF6S23140HR3
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Obsolete Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $17,50 $65,00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Tipo de transistor LDMOS, N-Channel, RF Power LDMOS, N-Channel Enhancement-Mode
Part Status Obsolete —
Frequency 2.62 GHz (operating band) —
Test Voltage (Vds) 28 V —
Current Rating [DATA_NEEDED: continuous/maximum drain current] —
Test Current 500 mA —
Power Gain (Gps) 16 dB (typical at 2.62 GHz) —
Power Output 7 W —
Voltage - Rated (Vds max) 68 V —
Encapsulado / Carcasa NI-780H-2L NI-880H-2L (CASE 465B-03, STYLE 1)
Supplier Device Package NI-780 —
Tipo de montaje Chassis Mount / Screw Flange Chassis / Flange Mount
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
Nivel MSL Not applicable (non-surface-mount ceramic package) —
Estado RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Primary Application WCDMA / UMTS base-station PA driver and final stage —
Technology — Lateral N-Channel RF Power MOSFET
Drain-Source Voltage (Rated) — 68 V
Operating Drain Voltage (Typical) — 28 V
Test Quiescent Drain Current — 1.3 A
Operating Frequency Range — 2300 MHz to 2400 MHz
Test Frequency — 2.39 GHz
Output Power (Average, 2 x W-CDMA) — 28 W
Power Gain — 15.2 dB
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Configuration — Single, push-pull capable
Input Matching — Internally matched (per datasheet)
Rango de temperatura de funcionamiento — [DATA_NEEDED: operating temperature range]
Lead-Free — [DATA_NEEDED: lead-free status]

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización