MRF6S27050HR5 vs MRF6S23140HR3 对比

详细并排对比 MRF6S27050HR5 出自 NXP Semiconductors 和 MRF6S23140HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S27050HR5 MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 Obsolete
NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 量产中

规格对比

参数 MRF6S27050HR5 MRF6S23140HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $17.50 $65.00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
晶体管类型 LDMOS, N-Channel, RF Power LDMOS, N-Channel Enhancement-Mode
Part Status Obsolete —
Frequency 2.62 GHz (operating band) —
Test Voltage (Vds) 28 V —
Current Rating [DATA_NEEDED: continuous/maximum drain current] —
Test Current 500 mA —
Power Gain (Gps) 16 dB (typical at 2.62 GHz) —
Power Output 7 W —
Voltage - Rated (Vds max) 68 V —
封装 / 外壳 NI-780H-2L NI-880H-2L (CASE 465B-03, STYLE 1)
Supplier Device Package NI-780 —
安装类型 Chassis Mount / Screw Flange Chassis / Flange Mount
工作温度 [DATA_NEEDED: operating temperature range] —
MSL 等级 Not applicable (non-surface-mount ceramic package) —
RoHS 状态 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Primary Application WCDMA / UMTS base-station PA driver and final stage —
Technology — Lateral N-Channel RF Power MOSFET
Drain-Source Voltage (Rated) — 68 V
Operating Drain Voltage (Typical) — 28 V
Test Quiescent Drain Current — 1.3 A
Operating Frequency Range — 2300 MHz to 2400 MHz
Test Frequency — 2.39 GHz
Output Power (Average, 2 x W-CDMA) — 28 W
Power Gain — 15.2 dB
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Configuration — Single, push-pull capable
Input Matching — Internally matched (per datasheet)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Lead-Free — [DATA_NEEDED: lead-free status]

数据手册与资源

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