MRF6S27050HR5 vs MRF6S23140HR3 Vergleich
Detaillierter Direktvergleich von MRF6S27050HR5 von NXP Semiconductors und MRF6S23140HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 ObsoleteNXP Semiconductors
MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
MRF6S23140HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6S27050HR5 | MRF6S23140HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $17,50 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Transistortyp | LDMOS, N-Channel, RF Power | LDMOS, N-Channel Enhancement-Mode |
| Part Status | Obsolete | — |
| Frequency | 2.62 GHz (operating band) | — |
| Test Voltage (Vds) | 28 V | — |
| Current Rating | [DATA_NEEDED: continuous/maximum drain current] | — |
| Test Current | 500 mA | — |
| Power Gain (Gps) | 16 dB (typical at 2.62 GHz) | — |
| Power Output | 7 W | — |
| Voltage - Rated (Vds max) | 68 V | — |
| Gehäuse / Bauform | NI-780H-2L | NI-880H-2L (CASE 465B-03, STYLE 1) |
| Supplier Device Package | NI-780 | — |
| Montageart | Chassis Mount / Screw Flange | Chassis / Flange Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| MSL-Level | Not applicable (non-surface-mount ceramic package) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Primary Application | WCDMA / UMTS base-station PA driver and final stage | — |
| Technology | — | Lateral N-Channel RF Power MOSFET |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Drain Voltage (Typical) | — | 28 V |
| Test Quiescent Drain Current | — | 1.3 A |
| Operating Frequency Range | — | 2300 MHz to 2400 MHz |
| Test Frequency | — | 2.39 GHz |
| Output Power (Average, 2 x W-CDMA) | — | 28 W |
| Power Gain | — | 15.2 dB |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Configuration | — | Single, push-pull capable |
| Input Matching | — | Internally matched (per datasheet) |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |