MRF6S9045NR1 vs MRF6S9045NBR1 Comparación
Comparación detallada lado a lado de MRF6S9045NR1 por NXP Semiconductors y MRF6S9045NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S9045NR1 | MRF6S9045NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $16,40 | $12,10 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | Lateral DMOS, RF power |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | Up to 1000 MHz (typical 880 MHz) |
| Power Gain | 22.7 dB | — |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | — |
| Encapsulado / Carcasa | TO-270-2 (Case 1265-09, Style 1) | NI-880H-2L (TO-272-2 variant) |
| Tipo de montaje | Surface Mount | Surface Mount (flange/ceramic) |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | — |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (V DSS min) | — | 68 V |
| Typical Operating Drain Voltage (V DD) | — | 28 V |
| Quiescent Drain Current (I DQ) | — | 350 mA |
| Output Power (P out avg) | — | 10 W |
| Power Gain (G ps) | — | 22.7 dB at 880 MHz |
| Drain Efficiency (η D) | — | [DATA_NEEDED: drain efficiency %] |
| Maximum Power Dissipation (P D max) | — | 175 W |
| Configuration | — | Single, common-source |
| Temperatura de funcionamiento | — | [DATA_NEEDED: junction/storage temperature range] |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |