MRF6S9045NR1 vs MRF6S9045NBR1 对比
详细并排对比 MRF6S9045NR1 出自 NXP Semiconductors 和 MRF6S9045NBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ 量产中规格对比
| 参数 | MRF6S9045NR1 | MRF6S9045NBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $16.40 | $12.10 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | Lateral DMOS, RF power |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | Up to 1000 MHz (typical 880 MHz) |
| Power Gain | 22.7 dB | — |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | — |
| 封装 / 外壳 | TO-270-2 (Case 1265-09, Style 1) | NI-880H-2L (TO-272-2 variant) |
| 安装类型 | Surface Mount | Surface Mount (flange/ceramic) |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | — |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (V DSS min) | — | 68 V |
| Typical Operating Drain Voltage (V DD) | — | 28 V |
| Quiescent Drain Current (I DQ) | — | 350 mA |
| Output Power (P out avg) | — | 10 W |
| Power Gain (G ps) | — | 22.7 dB at 880 MHz |
| Drain Efficiency (η D) | — | [DATA_NEEDED: drain efficiency %] |
| Maximum Power Dissipation (P D max) | — | 175 W |
| Configuration | — | Single, common-source |
| 工作温度 | — | [DATA_NEEDED: junction/storage temperature range] |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |