MRF6S9045NR1 vs MRF6S9045NBR1 Comparaison
Comparaison détaillée côte à côte de MRF6S9045NR1 par NXP Semiconductors et MRF6S9045NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S9045NR1 | MRF6S9045NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $16,40 | $12,10 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | Lateral DMOS, RF power |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | Up to 1000 MHz (typical 880 MHz) |
| Power Gain | 22.7 dB | — |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | — |
| Boîtier / Format | TO-270-2 (Case 1265-09, Style 1) | NI-880H-2L (TO-272-2 variant) |
| Type de montage | Surface Mount | Surface Mount (flange/ceramic) |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | — |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (V DSS min) | — | 68 V |
| Typical Operating Drain Voltage (V DD) | — | 28 V |
| Quiescent Drain Current (I DQ) | — | 350 mA |
| Output Power (P out avg) | — | 10 W |
| Power Gain (G ps) | — | 22.7 dB at 880 MHz |
| Drain Efficiency (η D) | — | [DATA_NEEDED: drain efficiency %] |
| Maximum Power Dissipation (P D max) | — | 175 W |
| Configuration | — | Single, common-source |
| Température de fonctionnement | — | [DATA_NEEDED: junction/storage temperature range] |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |