MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
N.º de pieza: MRF6S9160HR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $600 | $600,00 |
| 10 | $580 | $5.800,00 |
| 100 | $555 | $55.500,00 |
| 500 | $530 | $265.000,00 |
| 1.000 | $510 | $510.000,00 |
MRF6S9160HR3 Descripción general
An RF power MOSFET is a high-frequency, high-power transistor optimized for switching or amplifying RF energy in the VHF/UHF/microwave spectrum, typically built on a lateral silicon process with a thick metalized source for low parasitic inductance. Within the broader component taxonomy, an RF power MOSFET sits below general-purpose power MOSFETs and above small-signal RF FETs, serving as the active gain element in the final stage of a cellular base-station power amplifier chain.
Key features of the MRF6S9160HR3 include 880 MHz CW/Pulsed operation, 35 W average output power, 20.9 dB typical power gain, single N-CDMA-driven linearity, and a ceramic NI-780H package with flanged leads for screw-down PCB mounting. The lateral N-channel enhancement-mode architecture is intrinsically rugged under high VSWR and provides stable class-AB operation when biased at approximately 1.2 A DC.
From an architecture standpoint, the device is part of NXP's MRF6S series, a family of 28 V lateral RF MOSFETs covering 700-2700 MHz cellular bands. The 880 MHz tuning, 28 V rail, and integrated ESD structure make the part particularly well suited for macro-cell base-station PA line-replacement designs requiring high gain and broadband stability without external matching network rework.
Typical applications include GSM/EDGE/CDMA2000 macro base-station final-stage PAs, repeater and tower-mounted amplifier (TMA) drivers, 900 MHz industrial/scientific RF generators, and high-power ISM-band transmitters. Designers typically match the device with a 50 Ω microstrip input/output network and a 1.2 A quiescent bias supply.
A practical design consideration: the MRF6S9160HR3 requires a flange-mount heatsink and adequate forced-air cooling at full 35 W output. The lateral N-channel structure is tolerant of brief load-mismatch events, but sustained high reflected power will trigger thermal shutdown of the underlying silicon die.
This page synthesizes distributor availability, NXP datasheet electrical parameters, drop-in compatible variants in the MRF6S series, and practical base-station PA design notes not consolidated on the manufacturer's product page.
Alternativas directas para MRF6S9160HR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6S9160HR3 (mismo factor de forma y huella) — difiere en Mounting Type, Manufacturer, Package / Case, Technology, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6S9160HSR3
✅ Sustitución directa✓ En stock
$92.4 / unidad
Ver hoja de datos →MRF6S9060HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S9180HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S1800N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9060HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S9160HR3 Valores máximos y características eléctricas
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Frequency Band | 880 MHz (single-band cellular UHF) |
| Supply Voltage (VDD) | 28 V (typical operation) |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) |
| Encapsulado / Carcasa | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| Tipo de montaje | Chassis/Surface flange mount (screw-down) |
| Configuration | Single (single-ended, common-source) |
| Operating Mode | Enhancement mode, Class AB |
| Test Signal | Single N-CDMA |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) |
| Estado RoHS | unknown |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
Configuración de pines de MRF6S9160HR3
| Pin 1 | DRAIN (RF OUT) — RF output / drain connection, internally matched to 50 Ω at 880 MHz |
| Pin 2 | GATE (RF IN) — RF input / gate connection, DC-biased via external gate-bias network |
| Pin 3 | SOURCE (GND) — Source / ground, mechanically attached to package flange and heatsink |
Área de funcionamiento seguro (DC, Tj = 25 °C unless otherwise noted)
Aplicaciones típicas
MRF6S9160HR3 es adecuado para 6 aplicacións: Cellular Base Station Final Stage PA (900 MHz), Tower-Mounted Amplifier (TMA) Driver, Industrial 900 MHz RF Generator, RF Repeater / Coverage Extension Amplifier, Military / Tactical Radio Power Stage, Public Safety / Land Mobile Radio (LMR) Base Station.
Cellular Base Station Final Stage PA (900 MHz)
The MRF6S9160HR3 is engineered for the final stage of 900 MHz band macro-cell base-station power amplifiers where 35 W average N-CDMA envelopes drive antennas through duplexers and combiner networks. Its 880 MHz design center, 20.9 dB gain, and 28 V supply class-AB operation deliver the linearity required for multicarrier GSM/EDGE/CDMA2000 transmissions with acceptable ACPR and EVM. Compared with later 50 V LDMOS generations (e.g., MRFE6S90xx series), the MRF6S9160HR3 trades a few dB of efficiency for broader broadband stability and easier input-stage matching. Designers place it between the driver-stage LDMOS/MOSFET and the output isolator/duplexer, biasing at IDQ = 1.2 A from a temperature-compensated 28 V rail.
Recomendado
Tower-Mounted Amplifier (TMA) Driver
The MRF6S9160HR3 functions as the high-power driver in tower-mounted amplifier units that compensate feeder-cable losses at 900 MHz cellular sites. The 35 W average envelope and 20.9 dB gain restore uplink signal strength after long coaxial runs, while the lateral N-channel silicon provides the ruggedness required for outdoor thermal cycling and lightning-induced surge events. The 28 V supply is well-suited to standard -48 V site power rails after DC-DC conversion. Designers typically deploy the MRF6S9160HR3 inside a sealed aluminum enclosure with a conduction-cooled cold finger, eliminating fans at the tower top.
Recomendado
Industrial 900 MHz RF Generator
The MRF6S9160HR3 serves as the active element in industrial 900 MHz RF generators used for plasma excitation, dielectric heating, and RF drying systems. Its 35 W continuous-envelope rating and 28 V supply deliver the controlled power density these processes require, while the ceramic NI-780H-2L flange allows direct coupling to a process-chamber RF feedthrough or a custom load-matching network. The lateral N-channel silicon is intrinsically tolerant of the variable-impedance loads typical of these industrial processes, surviving brief VSWR events that would damage lesser RF transistors.
Recomendado
RF Repeater / Coverage Extension Amplifier
The MRF6S9160HR3 is well matched to indoor/outdoor cellular repeater and coverage-extension amplifier lineups operating in the 900 MHz band. The 35 W average power output and 20.9 dB gain let a single device drive distributed antenna systems through passive combiners with margin for feeder loss. The lateral silicon architecture maintains linearity under the multicarrier, multistandard signal mixes typical of modern indoor coverage systems, including simultaneous GSM/EDGE/LTE traffic. Designers should bias at IDQ = 1.2 A and provide 28 V from a local DC-DC converter fed by the -48 V site rail.
Recomendado
Military / Tactical Radio Power Stage
The MRF6S9160HR3 operates as a final-stage amplifier in tactical 900 MHz military radios and battlefield communications equipment, where 35 W output and -40 to +85 °C thermal tolerance are required. The ceramic NI-780H-2L package provides the mechanical and thermal margin necessary for harsh-environment operation, while the lateral N-channel silicon tolerates the load-mismatch events encountered with field-deployed antennas. The 28 V supply aligns with standard 24-28 V vehicle/mil-platform power rails, simplifying power-system integration. Designers should add VSWR foldback and overtemperature shutdown circuitry to protect the device in extended-mission scenarios.
Recomendado
Public Safety / Land Mobile Radio (LMR) Base Station
The MRF6S9160HR3 supports 900 MHz land mobile radio base stations used by public safety, utility, and transportation fleets requiring 35 W continuous output envelopes. Its 28 V class-AB operation provides the linearity required for analog FM and digital APCO/P25/TETRA signals at 900 MHz, while the ceramic flange package ensures thermal stability over extended duty cycles. The lateral silicon is rugged against the load variations introduced by mobile-vehicle-mounted antennas in the field. Designers typically match the device with a 50 Ω microstrip network and a low-noise driver-stage LDMOS for cascaded noise-figure performance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6S9160HR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6S9160HSR3 | MRF6S9060HR3 | MRF6S9180HR3 | MRF6S1800N | MRFE6S9060HR3 |
|---|---|---|---|---|---|---|
| Package | NI-780H-2L (CASE 465-06, STYLE 1) | SOT-957A (straight-lead SM variant) | NI-780H-2L (same) | NI-780H-2L (same) | NI-780 family | NI-780H-2L (same) |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 880 MHz | 880 MHz (same) | 900 MHz | 880 MHz (higher gain) | 1800 MHz DCS | 900 MHz |
| Average Output Power | 35 W | 35 W (same) | 60 W | 35 W | 20 W | 60 W |
| Drain Supply Voltage | 28 V | 28 V (same) | 28 V | 28 V | 28 V | 28 V |
| Power Gain (typical) | 20.9 dB | 20.9 dB (same) | ~20 dB | Higher gain tuning | ~16 dB | ~22 dB |
| Quiescent Bias Current (IDQ) | 1.2 A | 1.2 A (same) | ~1.5 A | 1.2 A | ~0.8 A | ~1.4 A |
| Mounting / Lead Form | Flanged chassis-mount (screw-down) | Straight-lead surface-mount (SOT-957A) | Flanged chassis-mount | Flanged chassis-mount | Flanged chassis-mount | Flanged chassis-mount |
Diferenciadores clave
- Higher average output power in the same NI-780H-2L package (frente a MRF6S9160HSR3)
- Higher output power available with same package footprint (frente a MRF6S9060HR3)
- Proven lateral N-channel silicon for high-VSWR tolerance (frente a MRFE6S9060HR3)
Notas de diseño
Estimated: at 35 W RF output with 28 V supply and typical class-AB efficiency near 33%, the MRF6S9160HR3 dissipates roughly 70 W as heat. The NI-780H-2L ceramic flange has a junction-to-flange thermal resistance of approximately 0.15 °C/W, so a chassis-mount heatsink with θSA ≤ 0.5 °C/W is required to keep Tj below 200 °C at 25 °C ambient. Forced-air cooling is recommended for continuous 35 W N-CDMA operation. Apply a thin layer of thermal compound (e.g., Shin-Etsu X-23-7783D) between the flange and heatsink to minimize contact resistance.
The MRF6S9160HR3 is a flange-mount device, but its input and output matching networks are implemented on the host PCB as 50 Ω microstrip. Use a low-loss RF substrate such as Rogers RO4350B or Taconic RF-35 with at least 35 µm copper thickness. Place input-matching capacitors within 2 mm of the gate lead to suppress parasitic inductance, and keep the output drain trace short and wide to maintain the 50 Ω impedance at 880 MHz. Provide a continuous ground plane on the second layer directly under the matching network to avoid slot-line modes.
Three common pitfalls when using the MRF6S9160HR3: (1) failing to temperature-compensate the IDQ = 1.2 A gate bias, which causes thermal runaway and reduced linearity as the heatsink warms; (2) omitting a 50 Ω gate-series resistor plus ferrite bead to suppress out-of-band oscillations below 700 MHz and above 1.2 GHz - the device can sustain low-frequency parametric oscillations that destroy the die; (3) driving the device from a non-50 Ω source impedance, which degrades gain and stability - always include a proper input-matching network even at the design center frequency.
Screw the MRF6S9160HR3 flange to the heatsink using the recommended torque (typically 1.0-1.2 N·m) to maintain low thermal-contact resistance without cracking the ceramic body. Place drain-bias feed inductors and gate-bias feed resistors perpendicular to the RF path to maximize isolation between bias and RF circuits. Add a small (100 pF) bypass capacitor on each bias pin as close to the device lead as possible, plus a larger electrolytic (10-47 µF) several millimeters away for low-frequency decoupling.
Información de cumplimiento
Compliance status not stated in the verified data; the NI-780H-2L is a ceramic air-cavity RF power package historically supplied with Sn/Pb lead finish for high-reliability military/aerospace use. Verify RoHS/lead-free status directly with NXP authorized distributors before designing into RoHS-restricted consumer products. The MRF6S9160HR3 is not AEC-Q100 qualified (not an automotive part).
