MRF7S38040HSR3 vs MRF8P26080HSR3 Comparación
Comparación detallada lado a lado de MRF7S38040HSR3 por NXP Semiconductors y MRF8P26080HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
MRF7S38040HSR3 ✓ ActivoNXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF7S38040HSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $15,95 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Tipo de transistor | N-Channel Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 3.4 GHz to 3.6 GHz | 2500 MHz to 2700 MHz |
| Drain-Source Voltage (VDS) | 30 V | — |
| Quiescent Drain Current (IDQ) | 450 mA | — |
| Output Power (Pout) | 8 W average (WiMAX OFDM) | — |
| Power Gain (Gp) | 14 dB typical | — |
| Eficiencia | [DATA_NEEDED: WiMAX OFDM drain efficiency %] | — |
| Encapsulado / Carcasa | NI-400S-2S (ceramic, surface-mount) | — |
| Tipo de montaje | Surface Mount (tape and reel) | Through-hole flange-mount with screw attachment |
| Application | WiMAX, WiBro, BWA, OFDM base-station amplifiers | — |
| Configuration | Single N-channel MOSFET | — |
| Operating Mode | Class AB / Class C amplifier | — |
| Estado RoHS | [DATA_NEEDED: confirm RoHS compliance] | — |
| Lead Free | [DATA_NEEDED: confirm lead-free] | — |
| Nivel MSL | [DATA_NEEDED: confirm MSL] | — |
| Datasheet Document | NXP datasheet MRF7S38040H.pdf (linked above) | — |
| Technology | — | Gen8 LDMOS (Silicon, Lateral) |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Encapsulado | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Rango de temperatura de funcionamiento | — | -40C to +150C (junction) |