MRF7S38040HSR3 vs MRF8P26080HSR3 Comparaison
Comparaison détaillée côte à côte de MRF7S38040HSR3 par NXP Semiconductors et MRF8P26080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
MRF7S38040HSR3 ✓ ActifNXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF7S38040HSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $15,95 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Type de transistor | N-Channel Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 3.4 GHz to 3.6 GHz | 2500 MHz to 2700 MHz |
| Drain-Source Voltage (VDS) | 30 V | — |
| Quiescent Drain Current (IDQ) | 450 mA | — |
| Output Power (Pout) | 8 W average (WiMAX OFDM) | — |
| Power Gain (Gp) | 14 dB typical | — |
| Rendement | [DATA_NEEDED: WiMAX OFDM drain efficiency %] | — |
| Boîtier / Format | NI-400S-2S (ceramic, surface-mount) | — |
| Type de montage | Surface Mount (tape and reel) | Through-hole flange-mount with screw attachment |
| Application | WiMAX, WiBro, BWA, OFDM base-station amplifiers | — |
| Configuration | Single N-channel MOSFET | — |
| Operating Mode | Class AB / Class C amplifier | — |
| Statut RoHS | [DATA_NEEDED: confirm RoHS compliance] | — |
| Lead Free | [DATA_NEEDED: confirm lead-free] | — |
| Niveau MSL | [DATA_NEEDED: confirm MSL] | — |
| Datasheet Document | NXP datasheet MRF7S38040H.pdf (linked above) | — |
| Technology | — | Gen8 LDMOS (Silicon, Lateral) |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Boîtier | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |