MRF7S38040HSR3 vs MRF8P26080HSR3 Vergleich
Detaillierter Direktvergleich von MRF7S38040HSR3 von NXP Semiconductors und MRF8P26080HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
MRF7S38040HSR3 ✓ AktivNXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF7S38040HSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $15,95 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Transistortyp | N-Channel Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 3.4 GHz to 3.6 GHz | 2500 MHz to 2700 MHz |
| Drain-Source Voltage (VDS) | 30 V | — |
| Quiescent Drain Current (IDQ) | 450 mA | — |
| Output Power (Pout) | 8 W average (WiMAX OFDM) | — |
| Power Gain (Gp) | 14 dB typical | — |
| Wirkungsgrad | [DATA_NEEDED: WiMAX OFDM drain efficiency %] | — |
| Gehäuse / Bauform | NI-400S-2S (ceramic, surface-mount) | — |
| Montageart | Surface Mount (tape and reel) | Through-hole flange-mount with screw attachment |
| Application | WiMAX, WiBro, BWA, OFDM base-station amplifiers | — |
| Configuration | Single N-channel MOSFET | — |
| Operating Mode | Class AB / Class C amplifier | — |
| RoHS-Status | [DATA_NEEDED: confirm RoHS compliance] | — |
| Lead Free | [DATA_NEEDED: confirm lead-free] | — |
| MSL-Level | [DATA_NEEDED: confirm MSL] | — |
| Datasheet Document | NXP datasheet MRF7S38040H.pdf (linked above) | — |
| Technology | — | Gen8 LDMOS (Silicon, Lateral) |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Gehäuse | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Betriebstemperaturbereich | — | -40C to +150C (junction) |