MRF8S21100HSR3 vs MRF6S21100NR1 Comparación
Comparación detallada lado a lado de MRF8S21100HSR3 por NXP Semiconductors y MRF6S21100NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ Activo
Comparación de especificaciones
| Parámetro | MRF8S21100HSR3 | MRF6S21100NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,00 | $21,24 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF Power LDMOS (7th-generation) |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Encapsulado / Carcasa | NI-780S (Case 465A-06), 3-pin ceramic flange | TO-270 WB-4 (Case 1486-03, Style 1) |
| Configuration | Single, push-pull N/A | — |
| Tipo de montaje | Chassis / flange mount, screw-down | Surface Mount (plastic overmold) |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| Estado RoHS | Compliant (per NXP product family) | [DATA_NEEDED: confirm RoHS compliance status] |
| Lead-Free | Yes | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | — | 28 V |
| Drain Current (Continuous) | — | 1.05 A |
| Drain Current (Pulsed) | — | [DATA_NEEDED: pulsed drain current value] |
| Power Gain | — | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | — | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | — | 1600 mA |
| Operating Mode | — | Class AB |
| Modulation Support | — | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | — | 68 V (rated) |