MRF8S21100HSR3 vs MRF6S21100NR1 비교

다음의 상세 나란히 비교: MRF8S21100HSR3 제조: NXP Semiconductors 및 MRF6S21100NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF8S21100HSR3 MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 ✓ 활성
NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ 활성

사양 비교

파라미터 MRF8S21100HSR3 MRF6S21100NR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $65.00 $21.24
트랜지스터 유형 N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology LDMOS (Laterally Diffused MOSFET) RF Power LDMOS (7th-generation)
Drain-Source Voltage (V(BR)DSS) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Frequency Range 2110 MHz to 2170 MHz —
Test Frequency 2.14 GHz —
Output Power (CW, typical) 100 W —
Average Output Power (W-CDMA) 24 W —
Power Gain (typ) 18.3 dB at 2.14 GHz —
Drain Current (ID, max) [DATA_NEEDED: max ID rating] —
패키지 / 케이스 NI-780S (Case 465A-06), 3-pin ceramic flange TO-270 WB-4 (Case 1486-03, Style 1)
Configuration Single, push-pull N/A —
실장 유형 Chassis / flange mount, screw-down Surface Mount (plastic overmold)
Operating Class Class AB or Class C —
Application W-CDMA, LTE base-station power amplifiers —
RoHS 상태 Compliant (per NXP product family) [DATA_NEEDED: confirm RoHS compliance status]
Lead-Free Yes —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 2110 MHz to 2170 MHz (W-CDMA downlink)
Drain Voltage (VDD) — 28 V
Drain Current (Continuous) — 1.05 A
Drain Current (Pulsed) — [DATA_NEEDED: pulsed drain current value]
Power Gain — 14.5 dB typical at 2.11 GHz
Output Power (Pout) — 23 W average (W-CDMA)
Quiescent Current (IDQ) — 1600 mA
Operating Mode — Class AB
Modulation Support — W-CDMA, TDMA, CDMA, multi-carrier
Drain-Source Breakdown (V(BR)DSS) — 68 V (rated)

데이터시트 & 자료

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