MRF8S9220HSR3 vs MRF8S9170NR3 Comparación
Comparación detallada lado a lado de MRF8S9220HSR3 por NXP Semiconductors y MRF8S9170NR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
MRF8S9220HSR3 ✓ Activo
Comparación de especificaciones
| Parámetro | MRF8S9220HSR3 | MRF8S9170NR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $96,80 | $38,50 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | RF Power LDMOS |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Encapsulado / Carcasa | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| Temperatura de unión de funcionamiento | -65 C to +225 C | — |
| Tipo de montaje | Surface Mount / Flange Mount | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | Lead Free (per digchip listing) |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors |
| Tipo de transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Encapsulado | — | OM-780-2 (ceramic flange) |
| Temperatura de funcionamiento | — | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |