MRF8S9220HSR3 vs MRF8S9170NR3 对比
详细并排对比 MRF8S9220HSR3 出自 NXP Semiconductors 和 MRF8S9170NR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF8S9220HSR3 | MRF8S9170NR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $96.80 | $38.50 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | RF Power LDMOS |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| 封装 / 外壳 | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| 工作结温 | -65 C to +225 C | — |
| 安装类型 | Surface Mount / Flange Mount | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | Lead Free (per digchip listing) |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors |
| 晶体管类型 | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| 封装 | — | OM-780-2 (ceramic flange) |
| 工作温度 | — | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |