MRFE6S9160HR3 vs MRF6S19200HR5 Comparación
Comparación detallada lado a lado de MRFE6S9160HR3 por NXP Semiconductors y MRF6S19200HR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRFE6S9160HR3 | MRF6S19200HR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $25,20 | $89,75 |
| Manufacturer | NXP Semiconductors | — |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| Encapsulado / Carcasa | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Tipo de montaje | Chassis / Flange mount (through-hole RF leads) | Flange / Screw Mount |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | Not applicable (non-SMD air-cavity package) | — |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Encapsulado | — | NI-780H-2L (ceramic flange) |
| Operating Mode | — | Class AB, Class C |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |
| Lead Free Status | — | Yes |