MRFE6S9160HR3 vs MRF6S19200HR5 Comparaison
Comparaison détaillée côte à côte de MRFE6S9160HR3 par NXP Semiconductors et MRF6S19200HR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRFE6S9160HR3 | MRF6S19200HR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,20 | $89,75 |
| Manufacturer | NXP Semiconductors | — |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| Boîtier / Format | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Type de montage | Chassis / Flange mount (through-hole RF leads) | Flange / Screw Mount |
| Plage de température de fonctionnement | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | Not applicable (non-SMD air-cavity package) | — |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Boîtier | — | NI-780H-2L (ceramic flange) |
| Operating Mode | — | Class AB, Class C |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |
| Lead Free Status | — | Yes |