MRFE6S9160HR3 vs MRF6S19200HR5 Vergleich
Detaillierter Direktvergleich von MRFE6S9160HR3 von NXP Semiconductors und MRF6S19200HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRFE6S9160HR3 | MRF6S19200HR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,20 | $89,75 |
| Manufacturer | NXP Semiconductors | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| Gehäuse / Bauform | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Montageart | Chassis / Flange mount (through-hole RF leads) | Flange / Screw Mount |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | Not applicable (non-SMD air-cavity package) | — |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Gehäuse | — | NI-780H-2L (ceramic flange) |
| Operating Mode | — | Class AB, Class C |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |
| Lead Free Status | — | Yes |