MRFG35003NT1 vs MRFG35010NT1 Comparación

Comparación detallada lado a lado de MRFG35003NT1 por NXP Semiconductors y MRFG35010NT1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRFG35003NT1 MRFG35003NT1 - 3W, 3.5GHz GaAs PHEMT RF Power FET | NXP

MRFG35003NT1 - 3W, 3.5GHz GaAs PHEMT RF Power FET | NXP

MRFG35003NT1 ✓ Activo
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

Comparación de especificaciones

Parámetro MRFG35003NT1 MRFG35010NT1
Marca NXP Semiconductors NXP Semiconductors
Categoría Transistors MOSFETs
Estado del ciclo de vida Activo Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $12,10 $25,95
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Tipo de transistor GaAs pHEMT N-channel RF Power FET GaAs pHEMT RF Power FET
Technology Gallium Arsenide Pseudomorphic HEMT —
Frequency Range 1.8 GHz to 3.6 GHz 1.8 GHz to 3.6 GHz
Test Frequency 3.55 GHz —
Rated Drain Voltage (VDS max) 15 V —
Continuous Drain Current 1.3 A —
Output Power (CW, typical) 3 W —
Power Gain (Gpss, min) 11.5 dB at 3.55 GHz —
Test Bias Voltage 12 V —
Test Quiescent Current (IDQ) 55 mA (small-signal); 650 mA (W-CDMA pulsed) —
Operating Class Class AB linear —
Matching Unmatched (external matching network required) —
Encapsulado / Carcasa PLD-1.5 (CASE 466-03, Style 1) PLD-1.5 flanged ceramic
Tipo de montaje Surface Mount Chassis-mount / flange-bolt
Maximum Channel Temperature 150 °C —
Estado RoHS Compliant [DATA_NEEDED: RoHS status]
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Configuration — Unmatched, common source
Class of Operation — Class AB linear
Supplier Device Package — PLD-1.5
Lead Free Status — Lead free (per datasheet)

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