MRFG35003NT1 vs MRFG35010NT1 对比
详细并排对比 MRFG35003NT1 出自 NXP Semiconductors 和 MRFG35010NT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFG35003NT1 | MRFG35010NT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Transistors | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.10 | $25.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| 晶体管类型 | GaAs pHEMT N-channel RF Power FET | GaAs pHEMT RF Power FET |
| Technology | Gallium Arsenide Pseudomorphic HEMT | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Frequency | 3.55 GHz | — |
| Rated Drain Voltage (VDS max) | 15 V | — |
| Continuous Drain Current | 1.3 A | — |
| Output Power (CW, typical) | 3 W | — |
| Power Gain (Gpss, min) | 11.5 dB at 3.55 GHz | — |
| Test Bias Voltage | 12 V | — |
| Test Quiescent Current (IDQ) | 55 mA (small-signal); 650 mA (W-CDMA pulsed) | — |
| Operating Class | Class AB linear | — |
| Matching | Unmatched (external matching network required) | — |
| 封装 / 外壳 | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 flanged ceramic |
| 安装类型 | Surface Mount | Chassis-mount / flange-bolt |
| Maximum Channel Temperature | 150 °C | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Configuration | — | Unmatched, common source |
| Class of Operation | — | Class AB linear |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |