MRFG35010AR5 vs MRFG35010NT1 Comparación

Comparación detallada lado a lado de MRFG35010AR5 por NXP Semiconductors y MRFG35010NT1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRFG35010AR5 MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 ✓ Activo
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

Comparación de especificaciones

Parámetro MRFG35010AR5 MRFG35010NT1
Marca NXP Semiconductors NXP Semiconductors
Categoría Transistors MOSFETs
Estado del ciclo de vida Activo Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $38,40 $25,95
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Tipo de transistor pHEMT GaAs RF Power FET (N-Channel) GaAs pHEMT RF Power FET
Frequency 3.55 GHz (typical), 3.4-3.8 GHz band —
Drain Voltage (Vds) Rated 15 V —
Drain Current Rating 2.9 A (pulsed) —
Quiescent Drain Current (Idq) 140 mA —
Output Power (Pout) 1 W (CW) —
Power Gain 10 dB (typical at 3.55 GHz) —
Technology GaAs pseudomorphic HEMT —
Encapsulado NI-360HF (ceramic flange, surface mount) —
Tipo de montaje Surface Mount (with bolted heatsink) Chassis-mount / flange-bolt
Operating Mode Class AB (typical RF PA) —
Configuration Single N-channel die Unmatched, common source
Estado RoHS [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS status]
Nivel MSL [DATA_NEEDED: MSL rating] —
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Frequency Range — 1.8 GHz to 3.6 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Class of Operation — Class AB linear
Encapsulado / Carcasa — PLD-1.5 flanged ceramic
Supplier Device Package — PLD-1.5
Lead Free Status — Lead free (per datasheet)

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización