MRFG35010AR5 vs MRFG35010NT1 对比
详细并排对比 MRFG35010AR5 出自 NXP Semiconductors 和 MRFG35010NT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFG35010AR5 | MRFG35010NT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Transistors | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $38.40 | $25.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| 晶体管类型 | pHEMT GaAs RF Power FET (N-Channel) | GaAs pHEMT RF Power FET |
| Frequency | 3.55 GHz (typical), 3.4-3.8 GHz band | — |
| Drain Voltage (Vds) Rated | 15 V | — |
| Drain Current Rating | 2.9 A (pulsed) | — |
| Quiescent Drain Current (Idq) | 140 mA | — |
| Output Power (Pout) | 1 W (CW) | — |
| Power Gain | 10 dB (typical at 3.55 GHz) | — |
| Technology | GaAs pseudomorphic HEMT | — |
| 封装 | NI-360HF (ceramic flange, surface mount) | — |
| 安装类型 | Surface Mount (with bolted heatsink) | Chassis-mount / flange-bolt |
| Operating Mode | Class AB (typical RF PA) | — |
| Configuration | Single N-channel die | Unmatched, common source |
| RoHS 状态 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Frequency Range | — | 1.8 GHz to 3.6 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Class of Operation | — | Class AB linear |
| 封装 / 外壳 | — | PLD-1.5 flanged ceramic |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |