MT40A512M8RH-075E:B vs K4A4G085WF-BITD Comparación
Comparación detallada lado a lado de MT40A512M8RH-075E:B por Micron Technology y K4A4G085WF-BITD por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | MT40A512M8RH-075E:B | K4A4G085WF-BITD |
|---|---|---|
| Marca | Micron Technology | Samsung Electronics |
| Categoría | Memory ICs | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,15 | $2,65 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Velocidad de datos | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Tipo de interfaz | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Tensión de referencia | On-die internal adjustable VREFDQ generation | — |
| Encapsulado | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (78FBGA) |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range (standard grade)] | -40C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Speed Grade Suffix | -075E | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Latencia CAS | — | CL19 (typical at 2666 Mbps) |
| Interfaz | — | Parallel, DDR4 SSTL12 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |