MT40A512M8RH-075E:B vs K4A4G085WF-BITD 对比
详细并排对比 MT40A512M8RH-075E:B 出自 Micron Technology 和 K4A4G085WF-BITD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M8RH-075E:B | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.15 | $2.65 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 接口类型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| 基准电压 | On-die internal adjustable VREFDQ generation | — |
| 封装 | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (78FBGA) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度 | [DATA_NEEDED: operating temperature range (standard grade)] | -40C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Speed Grade Suffix | -075E | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| CAS 延迟 | — | CL19 (typical at 2666 Mbps) |
| 接口 | — | Parallel, DDR4 SSTL12 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |